ICDS 27

The organising committee of the 27th International Conference on Defects in Semiconductors 2013 would like to warmly invite you to join us in Bologna, Italy, from 21 to 26 July 2013

under  the  patronage  of

SCOPE

ICDS-27 will focus on defects in semiconductors, with special emphasis on applications to materials and device functionality. "Defects" include point and extended defects, shallow and deep electronic dopants, optically and magnetically active defects in bulk materials and thin-films, as well as defects in organic semiconductors, low-dimensional and nanoscale structures, oxide layers, topological materials and materials for spintronics. Both basic and applied research topics will be covered.

ICDS previous editions
With more than 50 years of ideas and knowledge sharing on defects in semiconductors, ICDS is the not-to-be-missed event of 2013.

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INVITED SPEAKERS
Brandt Martin
Buonassisi Tonio
Calarco Raffaella
Chen Weimin
Claverie Alain
Dubois Jean-Marie
Ertekin Elif
Estreicher Stefan
Jelezko Fedor
Look David C.
Lyons John
McCallum Jeffrey
Mchedlidze Teimuraz
Morton John
Newton Mark
Nguyen Thien Phap
Nickel Norbert
Polimeni Antonio
Raebiger Hannes
Reshchikov Mikhail
Rogge Sven
Siebentritt Susanne
Skowronski Marek
Stavola Mike
Svensson Bengt
Thewalt Michael
Vyvenko Oleg
Yang Deren
Weber Eicke
Wetzel Christian
Zacharias Margit

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CONFERENCE VENUE

The conference will take place at the "Complesso Belmeloro" (downtown Bologna).
LOOK AT THE MAP

Bologna is the largest city of Emilia-Romagna Region in Northern Italy. Bologna is a lively and cosmopolitan Italian college city, with a rich history, art, cuisine, music, and culture.

important dates

Abstract submission by March 11

Notification to authors by April 10

Early registration by JUNE 1

Conference dates 21-26 July

Tutorial day 21 July - 9 a.m. to 4 p.m.

Manuscript submission by July 26

 

Corbett prize

The Corbett Prize will recognize one outstanding young researcher at ICDS-2013. It consists of a certificate signed by the Conference Chair and a check for €500. The Award is named in memory of James W. Corbett, one of the pioneers in the field of defects in semiconductors, who always helped and encouraged young researchers. The candidates must be less than 35 years of age on the first day of the conference. They must be the main contributors to the research presented on their posters, in terms of ideas and actual execution of the research. 

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