The organising committee of the 27th International Conference on Defects in Semiconductors 2013 would like to warmly invite you to join us in Bologna, Italy, from 21 to 26 July 2013
under the patronage of
ICDS-27 will focus on defects in semiconductors, with special emphasis on applications to materials and device functionality. "Defects" include point and extended defects, shallow and deep electronic dopants, optically and magnetically active defects in bulk materials and thin-films, as well as defects in organic semiconductors, low-dimensional and nanoscale structures, oxide layers, topological materials and materials for spintronics. Both basic and applied research topics will be covered.
ICDS previous editions
With more than 50 years of ideas and knowledge sharing on defects in semiconductors, ICDS is the not-to-be-missed event of 2013.
Look David C.
Nguyen Thien Phap
Delegates please apply for any needed
visa as soon as possible. For some countries this can take up to three
months. Please look at the
Ministry of Foreign Affairs web site for more information on entry and stay in Italy.
The Corbett Prize will recognize one outstanding young researcher at ICDS-2013. It consists of a certificate signed by the Conference Chair and a check for €500. The Award is named in memory of James W. Corbett, one of the pioneers in the field of defects in semiconductors, who always helped and encouraged young researchers. The candidates must be less than 35 years of age on the first day of the conference. They must be
the main contributors to the research presented on their posters, in terms of ideas and actual execution of the research.